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TIMING CONSIDERATIONS The timing diagram (Figure 2) assumes an analog input such that the positive true digital word 1001 1000 1001 0110 exists. The output will be complementary as shown in Figure 2 (0110 0111 0110 1001 is the digital output). Figures 3 and 4 are timing diagrams showing the relationship of serial data to clock and valid data to status.
The bq2016 gas gauge IC for battery pack or in-system installation maintains an accurate record of available battery capacity. To integrate charge and discharge activity of the battery, the IC monitors a voltage drop across a sense resistor connected in series with the cells of the battery. The bq2016 compensates for battery temperature, charge/discharge rate, and battery self-discharge to the charge counter to provide available- capacity information across a wide range of operating conditions. The bq2016 works with NiCd or NiMH battery packs that have a capacity of 1 to 4.5 Ah and that are designed for high discharge rate applications such as power tools.
Absolute Maximum RatingsNov.14.2002  - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V DC Electric Characteristics  - ICC changed 4mA -> 3mA  - ICC1 changed 25mA at 55ns -> 20mA at 55ns  - ICC1 changed 20mA at 70ns -> 15mA at 70ns  - ICC1 changed 3mA at 1us -> 2mA at 1us AC Test Conditions  - Output Load changed 5pF -> 30pF Data Retention Electric Characteristics  - ICCDR changed 10uA -> 6uA Marking Information  - Part Name changed HY62KF6403E ->9.4032E13
Parr number/PDF Mfg Pack D/C Descrpion
9.4032E13   9.4032E13 9.4032E13 PDF Download Notes: 1. Operation of this device in excess of
9.01E11   9.01E11 9.01E11 PDF Download The UPC2721 and UPC2722 are L-Band frequency con
9.02E11   9.02E11 9.02E11 PDF Download Stresses in excess of the absolute maximum ratin
9.03197E11   9.03197E11 9.03197E11 PDF Download   11CPDPower Dissipation Capacitance (Note
9.03E11   9.03E11 9.03E11 PDF Download Stresses beyond those listed under "absolut
9.04E11   9.04E11 9.04E11 PDF Download
9.06E11   9.06E11 9.06E11 PDF Download The 64Mb SDRAM has the ability to synchronously
9.07E12   9.07E12 9.07E12 PDF Download Stresses listed under Absolute Maximum Ratings m
9.09E12   9.09E12 9.09E12 PDF Download All parameters having min/max specifications are
9.12E11   9.12E11 9.12E11 PDF Download The 9.12E11 has two separate modes of operatio
9.14E11   9.14E11 9.14E11 PDF Download The impedance of the output driver is matched wi
9.16E12   9.16E12 9.16E12 PDF Download Global Infrared mode enable (active high). Durin
9.18511E11   9.18511E11 9.18511E11 PDF Download (3) The products described in this material are
9.18515E11   9.18515E11 9.18515E11 PDF Download Single chip transmit and receive interface for
9.18517E11   9.18517E11 9.18517E11 PDF Download The HIP6601B, HIP6603B and HIP6604B are high- f
9.18521E11   9.18521E11 9.18521E11 PDF Download The 1 Mbyte Flash memory array is organized into
9.18E11   9.18E11 9.18E11 PDF Download • True Dual-Ported memory cells which allow
9.19565E11   9.19565E11 9.19565E11 PDF Download Cellular Base Transceiver Station Transmit Chann
9.19E11   9.19E11 9.19E11 PDF Download For the most current package and ordering inform
9.1V   9.1V 9.1V PDF Download WEJ LL34 05+ 750, method 3131. The chosen ∆VBE measureme
9.1V08   9.1V08 9.1V08 PDF Download TOSHIBA SOD323 The sensitivity of the chip is adjusted by changi
9.1V23   9.1V23 9.1V23 PDF Download TOSHIBA SOT23
9.1V34   9.1V34 9.1V34 PDF Download ROHM LL34 The block diagram (Figure 1) shows the parasite-p
9.1X-DZD9.1X-TA   9.1X-DZD9.1X-TA 9.1X-DZD9.1X-TA PDF Download TOSHIBA SOT23-3   The amplifiers are intended for use direc
9.1X-DZD9.1X-TA/9.1V   9.1X-DZD9.1X-TA/9.1V 9.1X-DZD9.1X-TA/9.1V PDF Download High value, low leakage and small size are diffic
9.1X-DZD9.1X-TB   9.1X-DZD9.1X-TB 9.1X-DZD9.1X-TB PDF Download NEC 01+ Cycle time=1µs,100% duty IOUT=0mA,CE0.2V,Z
9.1Y-DZD9.1Y-TA   9.1Y-DZD9.1Y-TA 9.1Y-DZD9.1Y-TA PDF Download TOSHIBA 23-9.1V 05+
9.1Y-DZD9.1Y-TB   9.1Y-DZD9.1Y-TB 9.1Y-DZD9.1Y-TB PDF Download TOSHIBA 23-9.1V 05+ Detector Circuits When DC bias is available, Sc
9.20E11   9.20E11 9.20E11 PDF Download
9.216M   9.216M 9.216M PDF Download KDS 5×7 SMD 4P Address Inputs for 32M x 64 modules Bank Select
9.22E11   9.22E11 9.22E11 PDF Download   The PT4310 modules are a low-power series
9.23E11   9.23E11 9.23E11 PDF Download • Sub-micron CMOS Process   C High-s
9.28E11   9.28E11 9.28E11 PDF Download The DS1668 and DS1669 Dallastats are digital rhe
9.30E11   9.30E11 9.30E11 PDF Download 16-Bit Monotonic 5-V Rail-to-Rail Output Fast S
9.31E13   9.31E13 9.31E13 PDF Download • Plastic package has Underwriters Laborat
9.33099E11   9.33099E11 9.33099E11 PDF Download TRI-STATE is a registered trademark of National
9.33185E11   9.33185E11 9.33185E11 PDF Download The ISL6614A drives both the upper and lower gate
9.33198E11   9.33198E11 9.33198E11 PDF Download   These N-Channel power MOSFETs   ar
9.33508E11   9.33508E11 9.33508E11 PDF Download Note 1: Operating the device beyond parameters wi
9.33552E11   9.33552E11 9.33552E11 PDF Download The following are trademarks of Conexant Systems
9.33656E11   9.33656E11 9.33656E11 PDF Download UL Recognized File # E-96005 Plastic package h
9.33699E11   9.33699E11 9.33699E11 PDF Download FS8S0965RCB is a Fairchild Power Switch (FPS) th
9.33715E11   9.33715E11 9.33715E11 PDF Download Auto Memory Store Function This function automat
9.33737E11   9.33737E11 9.33737E11 PDF Download are fully compatible with PECL 10 K and 10 KH lo
9.33742E11   9.33742E11 9.33742E11 PDF Download The HD404318 Series is 4-bit HMCS400-series micr
9.337E11   9.337E11 9.337E11 PDF Download   4.3 Screening (JANS, JANTX, and JANTXV le
9.33834E11   9.33834E11 9.33834E11 PDF Download The 4K EEPROM devices require an 8-bit de- vice
9.33922E11   9.33922E11 9.33922E11 PDF Download Ruotare il selettore su FO . Quando lalimentazi
9.33976E11   9.33976E11 9.33976E11 PDF Download The LM124 consists of four independent, high gai
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